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AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 45 W, which makes it ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Ri JC Value 1.5 Unit C/W
Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS -0.5, 15 Drain Current Continuous ID Total Dissipation at TC = 25 C PD 115 Derate Above 25 C -- 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG -65, 150 Unit Vdc Vdc Adc W W/C C C
Figure 1. Available (flanged) Package
Features
Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 15 W) -- Error vector magnitude (EVM): 1.9% -- Power gain: 15 dB -- Drain efficiency: 32% -- Modulation spectrum: @ 400 kHz = -63 dBc. @ 600 kHz = -73 dBc. Typical continuous wave (CW) performance over entire digital communication system (DCS) band: -- P1dB: 49 W typical (typ). -- Power gain: @ P1dB = 14 dB. -- Efficiency: @ P1dB = 53% typ. -- Return loss: -12 dB. High-reliability, gold-metallization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 45 W minimum output power. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 26 Vdc, 1.840 GHz, 45 W CW output power. Large signal impedance parameters available.
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Table 3. ESD Rating* AGR18045E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) = 38 Drain-source Breakdown Voltage (VGS = 0 V, ID = 200 A) V(BR)DSS IGSS IDSS GFS 65 -- -- -- 3.8 -- -- -- -- -- 3.2 -- -- 1.5 75 4 -- -- Adc Vdc Symbol Min Typ Max Unit
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 150 A) Drain-source On-voltage (VGS = 10 V, ID = 0.5 A) Forward Transconductance (VDS = 10 V, ID = 0.4 A)
Adc S
Gate Quiescent Voltage (VDS = 26 V, ID = 400 mA) Table 5. RF Characteristics Parameter Drain-to-gate Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) Drain-to-source Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz)
VGS(TH) VDS(ON) VGS(Q)
4.8 -- --
0.22
Vdc
Vdc Vdc
Symbol Dynamic Characteristics CRSS COSS
Min -- --
Typ 1.0 24
Max -- --
Un i t pF pF
EDGE Linearity Characterization (POUT = 15 W, f = 1.840 GHz, VDS = 26 V, IDQ = 400 mA) Modulation spectrum @ 400 kHz Modulation spectrum @ 600 kHz
Drain Efficiency (VDS = 26 V, POUT = 15 W, IDQ = 400 mA)
Power Gain (VDS = 26 V, POUT = 15 W, IDQ = 400 mA)
(in Agere Systems Supplied Test Fixture) Functional Tests* (in Supplied Test Fixture)
GL
--
15 32
-- --
dB %
--
-- P1dB IRL -- --
-63 -73 49
-- -- -- --
dBc dBc W
Input Return Loss
Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 400 mA) Ruggedness (VDS = 26 V, POUT = 45 W, IDQ = 400 mA, VSWR = 10:1 [all angles])
No degradation in output power.
--
-12
dB
* Across full DCS band, 1.805 GHz--1.880 GHz.
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Test Circuit Illustrations for AGR18045E
R1 VGG C5 C4 Z1 RF INPUT C1 Z2 FB1 C3 Z3 Z12 Z11 Z4 2 1 3 Z5 DUT Z6 Z7 Z8 Z9 C2 Z10 RF OUTPUT
PINS: 1. DRAIN, 2. SOURCE, 3. GATE
VDD C6 C7 C8 C9 C10
A. Schematic
J3
C5
FB1 C4 R1
C3
C6 C7 C9 C8
C10
J1
J2
C1 C2
Parts List: ? Microstrip line: Z1 0.840 in. x 0.066 in.; Z2 0.598 in. x 0.066 in.: Z3 0.135 in. x 0.866 in.; Z4 0.175 in. x 0.866 in.; Z5 0.148 in. x 0.650 in.; Z6 0.212 in. x 0.650 in.; Z7 0.190 in. x 0.320 in.; Z8 0.200 in. x 0.140 in.; Z9 0.253 in. x 0.066 in.; Z10 0.745 in. x 0.066 in.; Z11 0.050 in. x 0.820 in.; Z12 0.050 in. x 0.950 in. (R) ? ATC chip capacitors: C1: 20 pF, 600F200JT250; C2: 10 pF, 100B100JW500; C3, C6: 8.2 pF, 600F8R2CT250. (R) ? Murata chip capacitors: C4, C7: 0.047 F, LLL317R71H473KD01L; C8: 0.01 F, GRM216R71H103KA01; C9: 0.1 F, GRM21BR71H104KA01. (R) ? Sprague tantalum surface-mount chip capacitors: C9, C10: 22 F, 35 V, T495X226KO3SAS. (R) ? Vishay 1206 size chip resistor: R1: 4.7 k, CRCW12064R75F100. (R) ? Amphenol connectors: J1, J2: 901-10019. (R) ? WECO connector: J3: 140-A-524-SMD/6. (R) ? Fair-Rite ferrite bead: FB1: 2743019447. (R) ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout Figure 2. AGR18045E Test Circuit
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics
0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170
U CT
0.6
Z0 = 4
IN D
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.6
1.8
1.4
2.0
3.0
4.0
5.0
10
20
LOA D <
0.2
0.49
OW A RD 7 HST 0.4 N GT -170 EL E AV W 0 < -90 -16
0.1
0.4
0.48
) / Yo (-jB CE
0.6
f3
0. 8
-85
AN PT CE US ES
1. 0
0.2
4 0.0 0 -15
IV CT
0.4
DU
0.3
6
,O o)
5
5 0.4
-70
06
0.
0 -65 .5
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
GHz (f) 1.805 (f1) 1.843 (f2) 1.880 (f3)
ZS ZL (Complex Source Impedance) (Complex Optimum Load Impedance) 3.33 - j7.50 5.76 - j3.74 3.18 - j7.14 5.53 - j3.45 3.03 - j6.88 5.34 - j3.24 GATE (2) ZS DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
0.
1.8
18
0 -5 -25
4
4 0.
0.3
0.1
3
2.
0
7
-30
-60
0.3
0.1
4
6
-
35
-70
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11 -100
0.39
CA P AC I TI
0.1
0.4
-110
VE
RE AC TA N
0.0
0.4 1
9
-12
CE CO M
0
0.0
PO N
0.4
8
2
EN
T
(-j
-1
0.
40
4
Z X/
-20
0.0
3.
0
f3
IN
-75
R
-15
4.0
ZS
f1
-4
-80
-10
5.0
ZL
f1
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
10
1.
0
0.8
0. 8
0.6
0.4
10 0.1
-1
20
0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES
L E OF ANG
0.2
0.2 0.3
0
50
-20
0.2 2
0.2 8
0.2 9 0.2 1 -30
0. 19 0. 31
0. 07 30 0.
43
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
70 60 50 40 30 20 10 0 POUT 70 60 50 40 30 20 10 0
0.0
0.5
1.0
1.5 PIN (W)Z
2.0
2.5
3.0
3.5
TEST CONDITIONS: VDD = 26 V, IDQ = 400 mA, f = 1842.5 MHz, CW MEASUREMENT.
Figure 4. Output Power and Efficiency vs. Input Power
17 16 15 14 GPS (dB)Z 13 12 11 10 9 8 IDQ = 550 mA IDQ = 475 mA IDQ = 400 mA IDQ = 325 mA IDQ = 250 mA
0.0
0.1
1.0 POUT (W)Z
10.0
100.0
1000.0
TEST CONDITIONS: VDD = 26 V, f = 1842.5 MHz, CW MEASUREMENT.
Figure 5. CW Power Gain vs. Output Power
DRAIN EFFICIENCY (%)Z
POUT (W)Z
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
16.0 15.5 15.0 14.5 14.0 GPS (dB)Z 13.5 13.0 12.5 12.0 11.5 11.0 1750 1770 1790 1810 1830 1850 1870 1890 1910 1930 IRL GPS 0 -2 -4 -6 IRL (dB)Z -8 -10 -12 -14 -16 -18 -20 1950
TEST CONDITIONS. CONDITIONS: VDD = 26 V, IDQ = 400 mA, PIN = 25 dBm, CW MEASUREMENT.
FREQUENCY (MHz)Z
Figure 6. Wideband Gain and Return Loss
16.0 15.5 15.0 14.5 GPS (dB)Z 14.0 13.5 13.0 12.5 12.0 IDQ = 325 mA IDQ = 550 mA IDQ = 475 mA IDQ = 400 mA
IDQ = 250 mA
0.1
1.0 POUT (W) (PEP)Z
10.0
100.0
TEST CONDITIONS. CONDITIONS: VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 7. Two Tone Power Gain vs. Output Power
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-20.0 -25.0 -30.0 -35.0 IMD3 (dBc) -40.0 -45.0 -50.0 -55.0 -60.0 IDQ = 400 mA IDQ = 550 mA IDQ = 475 mA IDQ = 250 mA
IDQ = 325 mA
0.1
1.0 POUT (W) (PEP)A
10.0
100.0
TEST CONDITIONS: VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 8. Intermodulation Distortion vs. Output Power
50 45 GPS (dB), DRAIN EFFICIENCY (%)Z 40 35 30 25 20 15 10 5 0 GPS 600 kHz 400 kHz
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 100.0 SPECTRAL REGROWTH (dBc)Z
0.1
1.0
POUT (W)Z
10.0
TEST CONDITIONS: VDD = 26 V, IDQ = 400 mA, fc = 1842.5 MHz, EDGE MODULATION.
Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
50 45 GPS (dB), DRAIN EFFICIENCY (%)Z 40 35 30 25 20 15 10 5 0 GPS EVM 10 9 8 7 EVM (% RMS)Z 6 5 4 3 2 1 0 100.0
1.0
10.0 POUT (W)Z
TEST CONDITIONS: VDD = 26 V, IDQ = 800 mA, fc = 1842.5 MHz, EDGE MODULATION.
Figure 10. Power Gain, Efficiency, and EVM vs. Output Power
AGR18045E 45 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR18045EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
1
A PEAK DEVICES AGR18045EU AGR21045F YYWWLL xxxx ZZZZZZZ
3
1 3 2
2
XXXX - TRACE CODE

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